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 CS 30
Phase Control Thyristor
VRRM = 1200-1600 V IT(RMS) = 49 A IT(AV)M = 31 A
TO-247 AD VRSM VDSM V 1200 1400 1600 VRRM VDRM V 1200 1400 1600 CS 30-12io1 CS 30-14io1 CS 30-16io1 Type
A C C A G
G
(TAB)
C = Cathode, A = Anode, G = Gate TAB = Anode
Symbol IT(RMS) IT(AV)M ITSM
Test Conditions TVJ = TVJM Tcase = 85C; 180 sine TVJ = 45C; VR = 0 V TVJ = TVJM VR = 0 V t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
Maximum Ratings 49 31 300 320 270 290 450 440 365 355 150 A A A A A A As A2s A2s A2s A/ms
2
Features
q q
q q
q
Thyristor for line frequency International standard package JEDEC TO-247 Planar passivated chip Long-term stability of blocking currents and voltages Epoxy meets UL 94V-0
It
TVJ = 45C VR = 0 V TVJ = TVJM VR = 0 V
Applications
q q q
(di/dt)cr
TVJ = TVJM repetitive, IT = 40 A f = 50 Hz, tP =200 ms VD = 2/3 VDRM IG = 0.3 A non repetitive, IT = IT(AV)M diG/dt = 0.3 A/ms TVJ = TVJM; VDR = 2/3 VDRM RGK = ; method 1 (linear voltage rise) TVJ = TVJM IT = IT(AV)M tP = 30 ms tP = 300 ms
500 1000 10 5 0.5 10 -40...+125 125 -40...+125
A/ms V/ms W W W V C C C Nm g
q
(dv/dt)cr PGM PGAV VRGM TVJ TVJM Tstg Md Weight
q
Motor control Power converter AC power controller Switch-mode and resonant mode power supplies Light and temperature control
Advantages
q
q q q
Easy to mount with 1 screw (isolated mounting screw hole) Space and weight savings Simple mounting Improved temperature and power cycling
Mounting torque M3
0.8...1.2 6
(c) 2000 IXYS All rights reserved
1-3
030
Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions
CS 30
Symbol IR, ID VT VT0 rT VGT IGT Test Conditions TVJ = TVJM; VR = VRRM; VD = VDRM IT = 45 A; TVJ = 25C Characteristic Values 5 1.6 0.9 15 1.0 1.2 65 80 50 0.2 5 150 100 2 0.62 0.82 50 mA
V
10
1: IGT, TVJ = 125C 2: IGT, TVJ = 25C 3: IGT, TVJ = -40C
V V mW V V mA mA mA V mA mA
VG
For power-loss calculations only (TVJ = 125C) VD = 6 V; VD = 6 V; TVJ = 25C TVJ = -40C TVJ = 25C TVJ = -40C TVJ = 125C VD = 2/3 VDRM
1
1
6 23 4 5
VGD IGD IL IH tgd RthJC RthJH a
TVJ = TVJM;
TVJ = 25C; tP = 10 ms IG = 0.3 A; diG/dt = 0.3 A/ms TVJ = 25C; VD = 6 V; RGK = TVJ = 25C; VD = 1/2 VDRM IG = 0.3 A; diG/dt = 0.3 A/ms DC current DC current Max. acceleration, 50 Hz
IGD, TVJ =125C
4: PGAV = 0.5 W 5: PGM = 1 W 6: PGM = 10 W
0.1 1 10 100 1000 mA 10000
IG
mA ms K/W K/W m/s2
Fig. 1 Gate trigger range
1000
TVJ = 25C
s
tgd typ.
100
Limit
TO-247 AD and ISOPLUS 247 TM
Dim. A B C D* E F G H J K L M N Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49 Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102
1 10 100
IG
10
mA
1000
Fig. 2 Gate controlled delay time tgd
* ISOPLUS 247 TM without hole
(c) 2000 IXYS All rights reserved
2-3
CS 30
60 A 50 IT 40
400 A ITSM 300
1000
50Hz, 80%VRRM
A2s
VR = 0 V
TVJ = 45C
200
I2t
400 300
TVJ = 45C
30
TVJ = 125C
20 100 10
TVJ = 125C TVJ = 125C TVJ = 25C
0 0.001
200
0 0.0
100 0.01 0.1 t s 1 1 2 3 4 5 6 7 ms 8 910 t
0.5
1.0 VT
1.5
V 2.0
Fig. 3 Forward characteristics
90 W 80 PT 70 60 50 40 30 20 10 0 0 10 20 30 40 IT(AV)M A
DC 180 sin 120 60 30
Fig. 4 Surge overload current ITSM: crest value, t: duration
Fig. 5 I2t versus time (1-10 ms)
50 A 45
RthHA :
1 K/W 2 K/W 3 K/W 5 K/W 7.5 K/W 15 K/W
IT(AV)M 40 35 30 25 20 15 10 5 0
DC 180 sin 120 60 30
0
25
50
75
100
Tamb
125 C 150
0
20
40
60
80 100 120 C Tcase
Fig. 6 Power dissipation versus forward current and ambient temperature
1.0 K/W ZthJC
30 60 120 180 DC
Fig. 7 Max. forward current at case temperature RthJC for various conduction angles d: d DC 180 120 60 30 RthJC (K/W) 0.62 0.71 0.748 0.793 0.817
0.5
Constants for ZthJC calculation: i 1 2 3
0.01 0.1 1 10 t s 100
Rthi (K/W) 0.206 0.362 0.052
ti (s) 0.013 0.118 1.488
0.0 0.001
Fig. 8 Transient thermal impedance junction to case
(c) 2000 IXYS All rights reserved
3-3


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